MOSFET Transistor. IRFZ44N Datasheet

IRFZ44N Transistor. Datasheet pdf. Equivalent

Part IRFZ44N
Description N-Channel MOSFET Transistor
Feature INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES .
Manufacture INCHANGE
Datasheet
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IRFZ44N
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ44N
FEATURES
·Drain Current –ID=49A@ TC=25
·Drain Source Voltage-
: VDSS= 55V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.032Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls, these
devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse (tp10μs)
PD Total Dissipation @TC=25
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
55 V
±20
V
49 A
160 A
94 W
175
-55~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
1.5
62
UNIT
/W
/W
isc websitewww.iscsemi.cn
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IRFZ44N
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ44N
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
VSD Forward On-Voltage
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 25A
VGS= ±20V;VDS= 0
VDS= 55V; VGS= 0
VDS= 55V; VGS= 0; Tj= 150
IS= 25A; VGS= 0
MIN MAX UNIT
55 V
24V
0.032
Ω
±100
25
250
1.3
nA
μA
V
·
isc websitewww.iscsemi.cn
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