N-Channel MOSFET
STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second g...
Description
STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET
Features
www.DataSheet4U.com Type
VDSS (@Tjmax)
RDS(on)
ID
STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N
650V 650V 650V 650V 650V
< 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω
10A 10A 10A(1) 10A 10A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Application
■ Switching application
Order codes
Part number STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N
Marking
B12NM60N B12NM60N F12NM60N P12NM60N W12NM60N
3 1
D²PAK
123
I²PAK
3 2 1
TO-220
TO-247
3 2 1
TO-220FP
Internal schematic diagram
Package
D²PAK I²PAK TO-220FP TO-220 TO-247
Packaging
Tape & reel Tube Tube Tube Tube
April 2007
Rev 2
1/18
www.st.com
18
Contents
Contents
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
1 2
www.DataSheet4U3.com 4 5 6
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . ...
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