D1527

2SD1527 Silicon NPN Triple Diffused Application High voltage power amplifier Outline TO-220AB ADE-208-913 (Z) 1st. Edition September 2000 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC PC PC * 1 Tj Tstg 1. Base 2. Collector (Flange) 3. Emitter Rating 1000 1000 5 0.5 1.8 25 150 –55 to +150 Unit V V V A W W °C °C Free Datasheet http://www.datasheet4u.com/ 2SD1527 Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to emitter breakdown V(BR)CEO voltage 1000 Emitter to base breakdown voltage V(BR)EBO 5 Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage I CBO hFE1 hFE2 VBE VCE (sat) — 10 10 — — Gain bandwidth product Collector output capacitance fT Cob — — Typ — — — — — — — 5 5 Max — Unit V Test conditions IC = 1 mA, RBE = ∞ —V IE = 1 mA, IC = 0 10 µA — — 1.2 V 5V VCB = 800 V, IE = 0 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 100 mA VCE = 5 V, IC = 100 mA IC = 300 mA, IB = 60 mA — MHz VCE = 20 V, IC = 50 mA — pF VCB = 100 V, IE = 0, f = 1 MHz Collector power dissipation Pc (W) Collector current IC (A) Maximum Collector Dissipation Curve 30 20 10 0 50 100 150 Case temperature TC (°C) Area of Safe Operation 1.0 (50 V, 0.5 A) TC = 25°C P C = 25 W 0.1 DC Oper...