D837

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD837 DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·High Switching Speed APPLICATIONS ·Audio power amplifiers ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 60 V 60 V 5V 4A 8A 40 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD837 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V ICBO Collector Cutoff Current VCB= 60V; IE= 0 ICEO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 30V; IB= 0 VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 3V hFE-2 DC Current Gain Switching Times IC= 3A ; VCE= 3V ton Turn-On Time toff Turn-Off Time IC= 3A; IB1= -IB2= 12mA MIN TYP. MAX UNIT 60 V 2V 4V 2.5 V 0.2 mA 0.5 mA 2 μA 1000 1000 10000 0.3 μs 4 μs isc website：w...