STH300NH02L-6

STH300NH02L-6 Automotive-grade N-channel 24 V, 0.95 mΩ typ., 180 A 2 STripFET™ III Power MOSFET in a H PAK-6 package Datasheet − production data Features TAB 1 H2PAK-6 7 Order code STH300NH02L-6 VDSS 24 V RDS(on) max. ID (1) < 1.2 mΩ 180 A 1. Current limited by package. Designed for automotive applications and AEC-Q101 qualified Conduction losses reduced Low profile, very low parasitic inductance, high current package Figure 1. Internal schematic diagram Applications Switching applications Description This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. Order code STH300NH02L-6 Table 1. Device summary Marking Package 300NH02L 2 H PAK-6 Packaging Tape and reel July 2013 This is information on a product in full production. DocID019022 Rev 4 1/15 www.st.com 15 Contents Contents STH300NH02L-6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . ...