MBT2222A

MBT2222 MBT2222A MBT222/MBT222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N TRANSISTORS 13 ABSOLUTE MAXIMUM RATINGS Descriptions Storage Temperature Junction Temperature Maximum Power Dissipation (Ta=25 C) Maximum Collector to Base Voltage Maximum Collector to Emitter Voltage Maximum Emitter to Base Voltage Maximum Collector Current Symbol Tstg Tj Ptot VCBO VCEO VEBO IC Min. 55 Typ. Max. Unit 150 C 150 C 250 mW 60/75 V 30/40 V 5.0/6.0 V 600 mA ELECTRICAL CHARACTERISTICS (Ta 25C) 2 1. BASE 3. EMITTER 2. COLLECTOR Type Color Code Marking SOT-23 Black MBT222/MBT222A Descriptions DC Current Gain Gain Bandwidth product Output Capacitance Input Capacitance (MBT222) Collector Cut-off Current (MBT222A) (MBT222A) Emitter Cut-off Current (MBT222A) Base Current (MBT222A) Collector Saturation Voltage Base Saturation Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Delay Time Rise Time Fall Time Storage Time Small Signal Current Gain Pulse Test 300 S, Duty Cycle. 2% Test Conditions VCE 10V, IC 0.1mA VCE 10V, IC 1mA VCE 10V, IC 10mA VCE 10V, IC 150mA VCE 1V, IC 150mA VCE 10V, IC 500mA VCE V, IC mA VCB V, IE mA, f MHz VCE V, IC mA, f MHz VCB 50V, I E 0mA VCB 60mA, IE 0mA VEB V, VEB V IC 0, VEB 3V VEB 3V, VCE 60V IC 150mA, IB 15mA IC 500mA, IB 50mA I C 150mA, IB 15mA, IC 500mA, IB 50mA IC 1.0mA IC 0 IC 100mA, IB 0 IC 0mA, IE 10uA IC 150mA IC 150mA IC 150mA IC 150mA VCE 10V, IC 1.0mA, f 1kHz VCE 10mA, IC 10mA, f 1kHz ...