Document
SEMICONDUCTOR
TECHNICAL DATA
Voltage regulation and voltage limiting. Voltage surge absorption.
FEATURES Small surface mounting type.
SMAZ3.6V~SMAZ36V
ZENER DIODE SILICON PLANAR DIODE
2 H
A D EE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL PD Tj Tstg
RATING 1 150
-55 150
UNIT W
1 C B
G 1. ANODE 2. CATHODE
F
DIM A B C D E F G H
MILLIMETERS 4.5+_ 0.2 2.6+_ 0.2 1.5+_ 0.2 5.0+_ 0.3 1.2+_ 0.3 2.0 +_ 0.2
0 ~ 0.15
R 0.5
SMA
Marking
Type Name
Type No. SMAZ3.6V SMAZ3.9V SMAZ4.3V SMAZ4.7V SMAZ5.1V SMAZ5.6V SMAZ6.2V SMAZ6.8V SMAZ7.5V
Lot No.
Mark Z3.6 Z3.9 Z4.3 Z4.7 Z5.1 Z5.6 Z6.2 Z6.8 Z7.5
Type No. SMAZ8.2V SMAZ9.1V SMAZ10V SMAZ11V SMAZ12V SMAZ13V SMAZ15V SMAZ16V SMAZ18V
Mark Z8.2 Z9.1 Z10 Z11 Z12 Z13 Z15 Z16 Z18
Type No. SMAZ20V SMAZ22V SMAZ24V SMAZ27V SMAZ30V SMAZ33V SMAZ36V
-
Mark Z20 Z22 Z24 Z27 Z30 Z33 Z36
-
2005. 8. 16
Revision No : 0
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SMAZ3.6V~SMAZ36V
ELECTRICAL CHARACTERISTICS (Ta=25 )
TYPE No. SMAZ3.6V
Zener Voltage Vz (V)
Min.
Max.
Iz (mA)
3.6 4.0 40
Dynamic Impedance Zz ( )
Max.
IZ(mA)
15 40
Reverse Current IR ( A)
Max.
VR(V)
20 1.0
SMAZ3.9V 3.9 4.4 40 15 40 20 1.0
SMAZ4.3V 4.3 4.8 40 15 40 20 1.0
SMAZ4.7V 4.7 5.2 40 10 40 20 1.0
SMAZ5.1V 5.1 5.7 40 8 40 20 1.0
SMAZ5.6V 5.6 6.3 40 8 40 20 1.5
SMAZ6.2V 6.2 7.0 40 6 40 20 3.0
SMAZ6.8V 6.8 7.7 40 6 40 20 3.5
SMAZ7.5V 7.5 8.4 40 4 40 20 4.0
SMAZ8.2V 8.2 9.3 40 4 40 20 5.0
SMAZ9.1V
9.1 10.2 40
6
40 20 6.0
SMAZ10V
10.0 11.2
40
6
40 10 7.0
SMAZ11V
11.0 12.3
20
8
20 10 8.0
SMAZ12V
12.0 13.5
20
8
20 10 9.0
SMAZ13V
13.3 15.0
20
10
20
10 10.0
SMAZ15V
14.7 16.5
20
10
20
10 11.0
SMAZ16V
16.2 18.3
20
12
20
10 12.0
SMAZ18V
18.0 20.3
20
12
20
10 13.0
SMAZ20V
20.0 22.4
20
14
20
10 15.0
SMAZ22V
22.0 24.5
10
14
10
10 17.0
SMAZ24V
24.0 27.6
10
16
10
10 19.0
SMAZ27V
27.0 30.8
10
16
10
10 21.0
SMAZ30V
30.0 34.0
10
18
10
10 23.0
SMAZ33V
33.0 37.0
10
18
10
10 25.0
SMAZ36V
36.0 40.0
10
20
10
10 27.0
(Note 1) The Zener voltage is measured 40ms after power is supplied. (Note 2) The Dynamic Impedance(ZZ) are measured by superimposing a minute altemating current on the regulated current(IZ).
2005. 8. 16
Revision No : 0
2/3
POWER DISSIPATION Pd (mW)
SMAZ3.6V~SMAZ36V
1200 1000
Pd - Ta
Glass epoxy substrate 32X30X1.6(mm)
800 Ceramic substrate
82X30X1.0(mm) 600
400 Individual part (not mounted)
200
0 0 25 50
87.5
100
150 200
AMBIENT TEMPERATURE Ta ( C)
100m
10m
1m 100µ
10µ 1µ
0
IZ - VZ
5 10 15 20 25 30 35 40
ZENER VOLTAGE VZ (V)
ZENER CURRENT IZ (mA)
3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36
2005. 8. 16
Revision No : 0
3/3
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