GAL16V8Z

GAL16V8Z GAL16V8ZD Zero Power E2CMOS PLD Features ZERO POWER E2CMOS TECHNOLOGY — 100µA Standby Current — Input Transition Detection on GAL16V8Z — Dedicated Power-down Pin on GAL16V8ZD — Input and Output Latching During Power Down HIGH PERFORMANCE E2CMOS TECHNOLOGY — 12 ns Maximum Propagation Delay — Fmax = 83.3 MHz — 8 ns Maximum from Clock Input to Data Output — TTL Compatible 16 mA Output Drive — UltraMOS® Advanced CMOS Technology E2 CELL TECHNOLOGY — Reconfigurable Logic — Reprogrammable Cells — 100% Tested/100% Yields — High Speed Electrical Erasure (<100ms) — 20 Year Data Retention EIGHT OUTPUT LOGIC MACROCELLS — Maximum Flexibility for Complex Logic Designs — Programmable Output Polarity — Architecturally Similar to Standard GAL16V8 PRELOAD AND POWER-ON RESET OF ALL REGISTERS — 100% Functional Testability APPLICATIONS INCLUDE: — Battery Powered Systems — DMA Control — State Machine Control — High Speed Graphics Processing ELECTRONIC SIGNATURE FOR IDENTIFICATION I 8 I OLMC OE Functional Block Diagram I/CLK CLK 8 I 8 I OLMC I/O/Q OLMC I/O/Q PROGRAMMABLE AND-ARRAY (64 X 32) 8 OLMC I/O/Q I/DPP 8 OLMC I/O/Q I 8 OLMC I/O/Q I 8 OLMC I/O/Q I 8 OLMC I/O/Q I/O/Q I/OE Description The GAL16V8Z and GAL16V8ZD, at 100 µA standby current and 12ns propagation delay provides the highest speed and lowest DESCRIPTION power combination PLD available in the market. The GAL16V8Z/ ZD is manufactured using Lattice Semiconductor's advanced zero power E2CM...