Elektronische Bauelemente
2SA950
-0.8A , -35V PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “...
Elektronische Bauelemente
2SA950
-0.8A , -35V
PNP Plastic Encapsulated
Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
1W output applications Complementary to 2SC2120
CLASSIFICATION OF hFE (1)
Product-Rank 2SA950-O 2SA950-Y
Range
100-200
160-320
GH
J AD
B K
E CF
TO-92
Emitter Collector Base
REF.
A B C D E F G H J K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Base
Collector
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature
VCBO VCEO VEBO
IC PC TJ, TSTG
-35 -30 -5 -0.8 600 150, -55~150
Unit
V V V A mW °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
-35
-
-
V IC= -0.1mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
-30
-
-
V IC= -10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V IE= -0.1mA, IC=0
Collector Cut-Off Current
ICBO - - -0.1 μA VCB= -35V, IE=0
Emitter Cut-Off Current
IEBO - - -0.1 μA VEB= -5V, IC=0
DC Current Gain
hFE (1) 100 - 320
hFE (2) 35 -
-
VCE= -1V, IC= -100mA VCE= -1V, IC= -700mA
Collector to Emitter Saturation Voltage
VCE(s...