DatasheetsPDF.com

2SA950

SeCoS

PNP Transistor

Elektronische Bauelemente 2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “...


SeCoS

2SA950

File Download Download 2SA950 Datasheet


Description
Elektronische Bauelemente 2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  1W output applications  Complementary to 2SC2120 CLASSIFICATION OF hFE (1) Product-Rank 2SA950-O 2SA950-Y Range 100-200 160-320 GH J AD B K E CF TO-92 Emitter Collector Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76  Base Collector   Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG -35 -30 -5 -0.8 600 150, -55~150 Unit V V V A mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO -35 - - V IC= -0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -30 - - V IC= -10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -0.1mA, IC=0 Collector Cut-Off Current ICBO - - -0.1 μA VCB= -35V, IE=0 Emitter Cut-Off Current IEBO - - -0.1 μA VEB= -5V, IC=0 DC Current Gain hFE (1) 100 - 320 hFE (2) 35 - - VCE= -1V, IC= -100mA VCE= -1V, IC= -700mA Collector to Emitter Saturation Voltage VCE(s...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)