2SA950 PNP Silicon Epitaxial Planar Transistor
for audio power amplifier applications.
The transistor is subdivided into...
2SA950
PNP Silicon Epitaxial Planar
Transistor
for audio power amplifier applications.
The
transistor is subdivided into two group, O and Y according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta=25oC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Symbol -VCBO -VCEO -VEBO
-IC -IB Ptot Tj TS
Value 35 30 5 800 160 600 150
-55 to +150
Unit V V V mA mA
mW OC OC
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Characteristics at Tamb=25 OC
Parameter
Symbol
Min.
Typ.
Max.
DC Current Gain
at -VCE=1V, -IC=100mA
Current Gain Group O
hFE
100
-
200
Y hFE
160
-
320
at -VCE=1V, -IC=700mA
hFE 35
-
-
Collector Cutoff Current at -VCB=35V
-ICBO
-
- 0.1
Emitter Cutoff Current at -VEB=5V
-IEBO
-
- 0.1
Collector Emitter Breakdown Voltage
at -IC=10mA Collector Emitter Saturation Voltage at -IC=500mA, -IB=20mA Base Emitter Voltage
-V(BR)CEO
30
-VCE(sat)
-
- 0.7
at –VCE=1V,-IC=10mA
Transition Frequency at -VCE=5V, -IC=10mA
Collector Output Capacitance at -VCB=10V, f=1MHz
-VBE
0.5
-
0.8
fT - 120 -
COB - 19 -
Unit
μA μA
V V
V MHz pF
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Ta=25℃
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