LMUN5330DW1T1

LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1 Series The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the LMUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium. Simplifies Circuit Design Reduces Board Space Reduces Component Count Pb-Free Package is available MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 , – minus sign for Q 1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Collector Current THERMAL CHARACTERISTICS V CBO V CEO IC 50 Vdc 50 Vdc 100 mAdc Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation T A = 25°C Derate above 25°C P D 187 (Note 1.) mW 256 (Note 2.) 1.5 (Note 1.) mW/°C 2.0 (Note 2.) Thermal Resistance – Junction-to-Ambient R θJA 670 (Note 1.) 490 (Note 2.) °C/W Characteristic (Both Junctions Heated) Symbol Max Total Device Dissipation T A = 25°C Derate above 25°C P D 250 (Note 1.) 385...