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LMUN5331DW1T1G Dataheets PDF



Part Number LMUN5331DW1T1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Dual Bias Resistor Transistors
Datasheet LMUN5331DW1T1G DatasheetLMUN5331DW1T1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1 Series The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by in.

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LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1 Series The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the LMUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Pb-Free Package is available MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 , – minus sign for Q 1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Collector Current THERMAL CHARACTERISTICS V CBO V CEO IC 50 Vdc 50 Vdc 100 mAdc Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation T A = 25°C Derate above 25°C P D 187 (Note 1.) mW 256 (Note 2.) 1.5 (Note 1.) mW/°C 2.0 (Note 2.) Thermal Resistance – Junction-to-Ambient R θJA 670 (Note 1.) 490 (Note 2.) °C/W Characteristic (Both Junctions Heated) Symbol Max Total Device Dissipation T A = 25°C Derate above 25°C P D 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead R θJA R θJL 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) Junction and Storage Temperature T J , T stg –55 to +150 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad Unit mW mW/°C °C/W °C/W °C 6 5 4 1 2 3 SOT-363/SC-88 6 54 Q2 R1 R2 R2 R1 Q1 12 3 MARKING DIAGRAM 6 54 XX 1 23 xx = Device Marking = (See Page 2) DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. LMUN5311DW–1/29 LESHAN RADIO COMPANY, LTD. LMUN5311DW1T1 Series ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1(K) LMUN5311DW1T1 SOT-363 11 10 LMUN5311DW1T1G SOT-363 11(Pb-Free) 10 LMUN5312DW1T1 SOT-363 12 22 LMUN5312DW1T1G SOT-363 12(Pb-Free) 22 LMUN5313DW1T1 SOT-363 13 47 LMUN5313DW1T1G SOT-363 13(Pb-Free) 47 LMUN5314DW1T1 SOT-363 14 10 LMUN5314DW1T1G SOT-363 14(Pb-Free) 10 LMUN5315DW1T1 SOT-363 15 10 LMUN5315DW1T1G SOT-363 15(Pb-Free) 10 LMUN5316DW1T1 SOT-363 16 4.7 LMUN5316DW1T1G SOT-363 16(Pb-Free) 4.7 LMUN5330DW1T1 SOT-363 30 1 LMUN5330DW1T1G SOT-363 30(Pb-Free) 1 LMUN5331DW1T1 SOT-363 31 2.2 LMUN5331DW1T1G SOT-363 31(Pb-Free) 2.2 LMUN5332DW1T1 SOT-363 32 4.7 LMUN5332DW1T1G SOT-363 32(Pb-Free) 4.7 LMUN5333DW1T1 SOT-363 33 4.7 LMUN5333DW1T1G SOT-363 33(Pb-Free) 4.7 LMUN5334DW1T1 SOT-.


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