LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount Transistors with Monolithic...
LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor
Transistors
NPN and
PNP Silicon Surface Mount
Transistors with Monolithic Bias Resistor Network
LMUN5311DW1T1 Series
The BRT (Bias Resistor
Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital
transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the LMUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium.
Simplifies Circuit Design Reduces Board Space Reduces Component Count Pb-Free Package is available
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1
and Q 2 , – minus sign for Q 1 (
PNP) omitted)
Rating
Symbol Value Unit
Collector-Base Voltage Collector-Emitter Voltage Collector Current THERMAL CHARACTERISTICS
V CBO V CEO
IC
50 Vdc 50 Vdc 100 mAdc
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation T A = 25°C Derate above 25°C
P D 187 (Note 1.) mW 256 (Note 2.) 1.5 (Note 1.) mW/°C
2.0 (Note 2.)
Thermal Resistance – Junction-to-Ambient
R θJA
670 (Note 1.) 490 (Note 2.)
°C/W
Characteristic (Both Junctions Heated)
Symbol
Max
Total Device Dissipation T A = 25°C Derate above 25°C
P D 250 (Note 1.) 385...