VS-63CTQ100-N3

www.vishay.com VS-63CTQ100PbF, VS-63CTQ100-N3 Vishay Semiconductors Schottky Rectifier, 2 x 30 A Base common cathode 2 TO-220AB Anode 2 Anode 1 Common 3 cathode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS TO-220AB 2 x 30 A 100 V 0.69 V 20 mA at 125 °C 175 °C Common cathode 11.25 mJ FEATURES 175 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC Designed and qualified according to JEDEC-JESD47 Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform (per device) VRRM IFRM TC = 139 °C (per leg) IFSM tp = 5 μs sine VF 30 Apk, TJ = 125 °C TJ Range VALUES 60 100 60 1500 0.69 - 65 to 175 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-63CTQ100PbF VS-63CTQ100-N3 100 100 UNITS V ABSOLUTE MAXIMUM RATI...