Silicon MOSFET type Integrated Circuit
MIP3J20MS
Type Application Structure Equivalent Circuit Package
Silicon MOSFET type Integrated Circuit
Switching Powe...
Description
MIP3J20MS
Type Application Structure Equivalent Circuit Package
Silicon MOSFET type Integrated Circuit
Switching Power Supply Control
CMOSType
Refer Figure 9
DIP7-A1
Marking
MIP3J2
A.ABSOLUTE MAXIMUM RATINGS (Ta= 25°C±3°C)
NO. Item Symbol
1 DRAIN Voltage 2 VCC Voltage 3 VDD Voltage 4 TR Voltage 5 TR Current
6 Output Peak Current 7 RecommendedOperating
Temperature 8 Channel Temperature 9 Storage Temperature
VD VCC VDD VTR ITRrev IDP
Tj Tch Tstg
Ratings
–0.3 to 700 –0.3 to 45 –0.3 to 8 –0.7 to VDD + 0.5 –5 to 0.6
0.6(*1)
–30 to +125 –30 to +150 55 to +150
Unit Note
V
*1: It is guaranteed within
the pulse as below.
V Leading Edge
Blanking Pulse +
Over current
V protection delay
V ton(BLK)+td(OCL) mA
A
°C °C °C
Publication date: March 2013
Ver. AEF
Page 1 of 9
MIP3J20MS
B.ELECTRICAL CHARACTERISTICS (continued) Measure condition (Tc= 25°C±3°C)
No.
Item
Symbol
Measure Condition
Typ. Min. Max.
Unit
1 Highest PFM output frequency at heavy load
*2 Jitter Frequency Deviation at heavy load
*3 Jitter Frequency Modulation Rate
*4 PWM output frequency
5 Lowest PFM output frequency at light load
6 Lowest output frequency at overload protection
7 Secondary current duty ratio at contant current control
*8 Secondary current duty jitter at contant current control
9 Voltage reference for constant voltage control
10 TR feedback voltage threshold
11 TR lowest voltage detection
12 VCC start voltage
13 VCC stop voltage
14 VDD start voltage
15 VDD stop voltage
16 S...
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