Document
SSFP5N80
StarMOST Power MOSFET
■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in
Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
Description
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology.
Application
■ Switching application
VDSS = 800V ID25 = 4.8A RDS(ON) = 2.6Ω
Pin1–Gate Pin2–Drain Pin1–Source
Absolute Maximum Ratings
ID@Tc=25ْ C ID@Tc=100ْC
Parameter Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V
IDM Pulsed Drain Current ① PD@TC=25ْC Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy ②
IAR Avalanche Current ①
EAR Repetitive Avalanche Energy ①
dv/dt
Peak Diode Recovery dv/dt ③
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
Max. 4.8 3.04 19.2 140 1.12 ±30 590 4.8 14 4.0
–55 to +150
300(1.6mm from case) 10 Ibf●in(1.1N●m)
Units
A
W W/ْ C
V mJ A mJ V/ns
ْC
Thermal Resistance
Parameter
Min. Typ. Max.
RθJC
Junction-to-case
— — 0.89
RθCS
Case-to-Sink,Flat,Greased Surface
—
0.5
—
RθJA Junction-to-Ambient
— — 62.5
Units ْC/W
1
SSFP5N80
StarMOST Power MOSFET
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 800 —
— V VGS=0V,ID=250μA
△V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient — 0.9 — V/ْC Reference to 25ْC,ID=250μA
RDS(on) VGS(th)
Static Drain-to-Source On-resistance — 2.0
Gate Threshold Voltage
3.0 —
2.6 Ω VGS=10V,ID=2.4A ④ 5.0 V VDS=VGS,ID=250μA
gfs Forward Transconductance — 4.9 — S VDS=50V,ID=2.4A
IDSS
Drain-to-Source Leakage current
——
10 μA VDS=800V,VGS=0V
— — 100
VDS=640V,VGS=0V,TJ=150ْC
Gate-to-Source Forward leakage
— — 100
VGS=30V
IGSS
Gate-to-Source Reverse leakage
nA
— — -100
VGS=-30V
Qg Total Gate Charge
— 25 33
ID=4.8A
Qgs Gate-to-Source charge
— 5.6 — nC VDS=640V
Qgd
Gate-to-Drain("Miller") charge
— 12 —
VGS=10V
td(on)
Turn-on Delay Time
— 22 55
VDD=400V
tr td(off)
Rise Time Turn-Off Delay Time
— 60 130
ID=4.8A
— 55 120 nS RG=25Ω
tf Fall Time
— 40 90
LD Internal Drain Inductance
— 4.5 —
Between lead, 6mm(0.25in.)
nH from package
LS
Internal Source Inductance
— 7.5 —
and center of
die contact
Ciss Input Capacitance
— 950 1250
VGS=0V
Coss Crss
Output Capacitance Reverse Transfer Capacitance
— 95 125 pF VDS=25V
— 11 15
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
Continuous Source Current . IS
(Body Diode)
Pulsed Source Current ISM (Body Diode) ①
.
VSD Diode Forward .