DatasheetsPDF.com

SSFP5N80 Dataheets PDF



Part Number SSFP5N80
Manufacturers Good-Ark
Logo Good-Ark
Description StarMOS Power MOSFET
Datasheet SSFP5N80 DatasheetSSFP5N80 Datasheet (PDF)

SSFP5N80 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through.

  SSFP5N80   SSFP5N80



Document
SSFP5N80 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology. Application ■ Switching application VDSS = 800V ID25 = 4.8A RDS(ON) = 2.6Ω Pin1–Gate Pin2–Drain Pin1–Source Absolute Maximum Ratings ID@Tc=25ْ C ID@Tc=100ْC Parameter Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V IDM Pulsed Drain Current ① PD@TC=25ْC Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ② IAR Avalanche Current ① EAR Repetitive Avalanche Energy ① dv/dt Peak Diode Recovery dv/dt ③ TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Max. 4.8 3.04 19.2 140 1.12 ±30 590 4.8 14 4.0 –55 to +150 300(1.6mm from case) 10 Ibf●in(1.1N●m) Units A W W/ْ C V mJ A mJ V/ns ْC Thermal Resistance Parameter Min. Typ. Max. RθJC Junction-to-case — — 0.89 RθCS Case-to-Sink,Flat,Greased Surface — 0.5 — RθJA Junction-to-Ambient — — 62.5 Units ْC/W 1 SSFP5N80 StarMOST Power MOSFET Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 800 — — V VGS=0V,ID=250μA △V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient — 0.9 — V/ْC Reference to 25ْC,ID=250μA RDS(on) VGS(th) Static Drain-to-Source On-resistance — 2.0 Gate Threshold Voltage 3.0 — 2.6 Ω VGS=10V,ID=2.4A ④ 5.0 V VDS=VGS,ID=250μA gfs Forward Transconductance — 4.9 — S VDS=50V,ID=2.4A IDSS Drain-to-Source Leakage current —— 10 μA VDS=800V,VGS=0V — — 100 VDS=640V,VGS=0V,TJ=150ْC Gate-to-Source Forward leakage — — 100 VGS=30V IGSS Gate-to-Source Reverse leakage nA — — -100 VGS=-30V Qg Total Gate Charge — 25 33 ID=4.8A Qgs Gate-to-Source charge — 5.6 — nC VDS=640V Qgd Gate-to-Drain("Miller") charge — 12 — VGS=10V td(on) Turn-on Delay Time — 22 55 VDD=400V tr td(off) Rise Time Turn-Off Delay Time — 60 130 ID=4.8A — 55 120 nS RG=25Ω tf Fall Time — 40 90 LD Internal Drain Inductance — 4.5 — Between lead, 6mm(0.25in.) nH from package LS Internal Source Inductance — 7.5 — and center of die contact Ciss Input Capacitance — 950 1250 VGS=0V Coss Crss Output Capacitance Reverse Transfer Capacitance — 95 125 pF VDS=25V — 11 15 f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions Continuous Source Current . IS (Body Diode) Pulsed Source Current ISM (Body Diode) ① . VSD Diode Forward .


SAS221S4 SSFP5N80 AWZ7813


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)