2SB649

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -180 V 3. BASE VCEO Collector-Emitter Voltage 2SB649 -120 V 2SB649A -160 VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ BDTICELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage Collector-emitter breakdown voltage V(BR)CBO V(BR)CEO IC =-1mA,IE=0 IC=-10mA,IB=0 2SB649 2SB649A -180 -120 -160 V V Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC =0 -5 V Collector cut-off current ICBO VCB=-160V,IE=0 -10 µA Emitter cut-off current DC current gain IEBO hFE(1) VEB=-4V,IC=0 VCE=-5V,IC=-150mA 2SB649 2SB649A 60 60 -10 µA 320 200 hFE(2) VCE=-5V,IC=-500mA 30 Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -1 V Base-emitter voltage VBE VCE=-5V,IC=-150mA -1.5 V Transition frequency fT VCE=-5V,IC=-150mA 140 MHz Collector output capacitance CLASSIFICATION OF hFE(1) Rank Cob VCB=-10V,IE=0,f=1MHz BC 27 D pF Range 2SB649 60-120 100-200 160-320 2SB649A 60-120 1...