AO4606

AO4606 30V Complementary MOSFET General Description The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Product Summary N-Channel VDS= 30V ID= 6A (VGS=10V) RDS(ON) < 30mΩ (VGS=10V) < 42mΩ (VGS=4.5V) 100% UIS Tested 100% Rg Tested P-Channel -30V -6.5A (VGS=-10V) RDS(ON) < 28mΩ (VGS=-10V) < 44mΩ (VGS=-4.5V) 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Top View D2 D1 S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 G2 G1 S2 S1 Pin1 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR 6 5 30 10 5 -6.5 -5.3 -30 23 26 TA=25°C Power Dissipation B TA=70°C 22 PD 1.3 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 32 Max Units 62.5 °C/W 90 °C/W 40 °C/W Rev 10: April 2012 www.aosmd.com Page 1 of 9 AO4606 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Param...