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IPI80P03P4-05 Dataheets PDF



Part Number IPI80P03P4-05
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPI80P03P4-05 DatasheetIPI80P03P4-05 Datasheet (PDF)

OptiMOS®-P2 Power-Transistor Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 Product Summary V DS R DS(on) (SMD Version) ID -30 V 4.7 mΩ -80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80P03P4-05 IPI80P03P4-05 IPP80P03P4-05 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4P0305 4P0305 4P0305 Max.

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OptiMOS®-P2 Power-Transistor Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 Product Summary V DS R DS(on) (SMD Version) ID -30 V 4.7 mΩ -80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80P03P4-05 IPI80P03P4-05 IPP80P03P4-05 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4P0305 4P0305 4P0305 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID T C=25°C, V GS=-10V T C=100°C, V GS=-10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse E AS I D=-40A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Rev. 1.0 page 1 Value -80 -80 -320 410 -80 ±20 137 -55 ... +175 55/175/56 Unit A mJ A V W °C 2008-09-30 IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - - 1.1 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= -1mA -30 - -V V GS(th) V DS=V GS, I D=-253µA -2.0 -3.0 -4.0 I DSS V DS=-24V, V GS=0V, T j=25°C - -0.05 -1 µA V DS=-24V, V GS=0V, T j=125°C2) - -20 -200 I GSS V GS=-16V, V DS=0V - - -100 nA R DS(on) V GS=-10V, I D=-80A - 4.1 5 mΩ V GS=-10V, I D=-80A, SMD version - 3.8 4.7 Rev. 1.0 page 2 2008-09-30 Parameter Symbol Conditions IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 min. Values typ. Unit max. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time C iss C oss Crss t d(on) tr t d(off) tf V GS=0V, V DS=-25V, f =1MHz V DD=-15V, V GS=-10V, I D=-80A, R G=3.5Ω - 7900 10300 pF - 2340 3040 - 50 100 - 35 - ns - 10 - 70 - 20 - Gate Charge Characteristics2) Gate to source charge Q gs - 42 55 nC Gate to drain charge Gate charge total Q gd V DD=-24V, I D=-80A, - 10 20 Q g V GS=0 to -10V - 100 130 Gate plateau voltage V plateau - -5.3 - V Reverse Diode Diode continous forward current2) Diode pulse current2) IS I S,pulse T C=25°C - - -80 A - - -320 Diode forward voltage V SD V GS=0V, I F=-80A, T j=25°C - - -1.3 V Reverse recovery time2) Reverse recovery charge2) t rr V R=-15V, I F=-80A, Q rr di F/dt =-100A/µs - 100 - ns - 80 - nC 1) Current is limited by bondwire; with an.


IPB80P03P4-05 IPI80P03P4-05 IPP80P03P4-05


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