Document
OptiMOS®-P2 Power-Transistor
Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested
IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05
Product Summary V DS R DS(on) (SMD Version) ID
-30 V 4.7 mΩ -80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB80P03P4-05 IPI80P03P4-05 IPP80P03P4-05
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4P0305 4P0305 4P0305
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C, V GS=-10V
T C=100°C, V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-40A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-80
-80
-320 410 -80 ±20 137 -55 ... +175 55/175/56
Unit A
mJ A V W °C
2008-09-30
IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05
Parameter
Symbol
Conditions
min.
Values typ.
Unit max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
-
- - 1.1 K/W - - 62
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area3)
-
- 62 - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= -1mA -30 -
-V
V GS(th) V DS=V GS, I D=-253µA
-2.0
-3.0
-4.0
I DSS
V DS=-24V, V GS=0V, T j=25°C
-
-0.05
-1 µA
V DS=-24V, V GS=0V, T j=125°C2)
-
-20 -200
I GSS
V GS=-16V, V DS=0V
-
- -100 nA
R DS(on) V GS=-10V, I D=-80A - 4.1 5 mΩ
V GS=-10V, I D=-80A, SMD version
-
3.8 4.7
Rev. 1.0
page 2
2008-09-30
Parameter
Symbol
Conditions
IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05
min.
Values typ.
Unit max.
Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
C iss C oss Crss t d(on) tr t d(off) tf
V GS=0V, V DS=-25V, f =1MHz
V DD=-15V, V GS=-10V, I D=-80A, R G=3.5Ω
- 7900 10300 pF - 2340 3040 - 50 100 - 35 - ns - 10 - 70 - 20 -
Gate Charge Characteristics2)
Gate to source charge
Q gs
- 42 55 nC
Gate to drain charge Gate charge total
Q gd V DD=-24V, I D=-80A,
-
10 20
Q g V GS=0 to -10V
- 100 130
Gate plateau voltage
V plateau
- -5.3 - V
Reverse Diode
Diode continous forward current2) Diode pulse current2)
IS I S,pulse
T C=25°C
- - -80 A - - -320
Diode forward voltage
V SD
V GS=0V, I F=-80A, T j=25°C
- - -1.3 V
Reverse recovery time2) Reverse recovery charge2)
t rr V R=-15V, I F=-80A, Q rr di F/dt =-100A/µs
- 100 - ns - 80 - nC
1) Current is limited by bondwire; with an.