K3747

Ordering number : ENN7767 www.DataSheet4U.com 2SK3747 N-Channel Silicon MOSFET 2SK3747 High-Voltage, High-Speed Switching Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1 VDD=99V, L=20mH, IAV=2A *2 L≤20mH, single pulse Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : K3747 Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) ID=1mA, VGS=0 VDS=1200V, VGS=0 VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=20V, ID=1A ID=1A, VGS=10V Ratings 1500 ±20 2 4 3.0 50 150 --55 to +150 42 2 Unit V V A A W W °C °C mJ A min 1500 2.5 0.7 Ratings typ max Unit V 100 µA ±10 µA 3.5 V 1.4 S 10 13 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely h...