2SK1341
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switc...
2SK1341
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching
regulator and DC-DC converter
Outline
TO-3P
D G1
2 3 1. Gate 2. Drain (Flange)
S 3. Source
2SK1341
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Symbol VDSS VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 900 ±30 6 15 6 100 150 –55 to +150
Unit V V A A A W °C °C
2
2SK1341
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS 900
Gate to source breakdown voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on) resistance
— — 2.0 —
Forward transfer admittance |yfs|
2.3
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage
t d(on) tr t d(off) tf VDF
— — — — —
Body to drain diode reverse recovery time
t rr
—
Note: 1. Pulse test
Typ Max ——
——
— ±10 — 250 — 3.0 2.0 3.0
3.7 — 980 — 400 — 195 — 20 — 80 — 125 — 100 — 0.9 —
1000 —
Unit V
V
µA...