2SB1432

DATA SHEET SILICON POWER TRANSISTOR 2SB1432 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1432 is a Darlington power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES High hFE due to Darlington connection hFE ≥ 1,000 @VCE = −2.0 V, IC = −10 A) Mold package that does not require an insulation board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg Conditions PW ≤ 300 µs, duty cycle ≤ 10% TC = 25°C TA = 25°C Ratings −100 −100 −8.0 +–10 +–20 Unit V V V A A −1.0 30 2.0 150 −55 to +150 A W W °C °C ORDERING INFORMATION Part No. 2SB1432 Package Isolated TO-220 (Isolated TO-220) INTERNAL EQUIVALENT CIRCUIT 1. Base 2. Collector 3. Emitter The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative fo...