3DD164

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD164(166), 3DD167(169) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, G, G+ TECHNICAL DATA: Parameter name Symbols Unit Collector-Emitter Voltage VCEO V Collector-Emitter Breakdown Voltage V(BR)CEO V C-Base Breakdown Voltage V(BR)CBO V Emitter-Base Voltage Max. Collector Current Max. Collector Dissipation Junction Temperature Storage Temperature Collector-Emitter Leakage Current VEBO ICM PCM Tjm Tstg ICEO V A W °C °C mA Collector- Emitter VCE(sat) V Saturation Voltage Drop DC Current Gain hFE E-Base Breakdown Voltage V(BR)EBO V (Ta = 25°C ) Specifications 3DD164 3DD167 ABCDE F 50 100 150 200 250 300 50 100 150 200 250 300 3DD164: IC=5mA 3DD167: IC=5mA 80 150 200 250 350 400 3DD164: IC=5mA 3DD167: IC=5mA 55 10 100 (Tc≤75°C) 15 150 (Tc≤75°C) 175 -55~+175 2.0 (A:VCE=30V;B:VCE=50V; C~F:VCE=100V) 1.5 (IC=5A,IB=0.5A) 1.5 (IC=7.5A, IB=0.75A) Max.:180,Min.:15 (VCE=5V,IC=5A) ≥5 (IE=5mA) Max.:180, Min.:15 (VCE=5V,IC=7.5A) ≥5 (IE=10mA) hFE Colored: Color hFE Red 15~25 Orange 25~40 Yellow 40~55 Green 55~80 B...