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JCS2N60I

JILIN SINO-MICROELECTRONICS

N-channel enhancement mode Field-Effect Transistor

R N JCS2N60 U/I ◆600V,RDS=5.0 Ω@VGS=10V ◆( 12.5nC) ◆ Crss( 7.6pF) ◆ ◆ ◆ dv/dt ◆ ◆ ◆UPS JCS2N60U/I N , VDMOS 。,...


JILIN SINO-MICROELECTRONICS

JCS2N60I

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R N JCS2N60 U/I ◆600V,RDS=5.0 Ω@VGS=10V ◆( 12.5nC) ◆ Crss( 7.6pF) ◆ ◆ ◆ dv/dt ◆ ◆ ◆UPS JCS2N60U/I N , VDMOS 。, , 。 (,Tc=25℃) - VDSS ID T=25℃ T=100℃ ( 1) IDM( 1) VGSS ( 2) EAS( 2) ( 1) IAR( 1) EAR( 1) ( 3) dv/dt( 3) PD TC=25℃ - 25℃ TJ,TSTG TL * TO-251 TO-252 JCS2N60U JCS2N60I TO-252 TO-251 JCS2N60U/ JCS2N60I 600 1.8 1.1 6.0 ±30 120 1.8 4.4 5.5 44 0.35 -55~+150 300 V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ :200810A 1/11 JCS2N60U/I - BVDSS ΔBVDSS/ΔTJ IDSS - - IGSSF IGSSR VGS(th) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd ID=250μA, VGS=0V 600 - ID=1mA, 25℃ - 0.65 VDS=600V,VGS=0V, TC=25℃ - - VDS=480V, TC=125℃ -- VDS=0V, VGS =30V -- VDS=0V, VGS =-30V -- VDS = VGS , ID=250μA VGS =10V , ID=0.9A VDS = 40V , ID=0.9A( 4) 2.0 - 3.8 1.85 VDS=25V, VGS =0V, f=1.0MHZ - 380 - 35 - 7.6 VDD=300V,ID=2.0A,RG=25Ω ( 4,5) - 16 50 - 40 - 40 VDS =480V , ID=2.0A, VGS =10V ( 4,5) - 12.5 - 2.2 - 5.4 - VSD trr Qrr IS ISM VGS=0V, IS=1.8A VGS=0V, IS=2.0A dIF/dt=100A/μs ( 4) ---- 250 - 1.31 10 100 100 -100 4.0 5.0 - 490 46 9.9 40 110 90 90 17 - 1.8 6.0 1.4 - V V/℃ μA μA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC A A V ns μC :200810A 2/11 JCS2N60U/I Rth(j-c) Rth(j-A) JCS2N60U/ JCS2N60I 2.87 110 ℃/W ℃/W 1: 2:L=68mH, IAS=A, V DD=50V, RG=25 Ω, TJ=25℃ 3:ISD ≤2A,di/dt ≤300A/μs,VDD≤BVDSS, TJ=25℃ 4::≤300μs,≤2% 5: :200810A 3/11 ⡍ᕕ᳆ JCS2N608,   ⠜ᴀ:200810A ...




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