JCS2N60C

N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package    LED APPLICATIONS  High frequency switching mode power supply  Electronic ballast  LED power supply  CrssB B ( 7.6pF)    dv/dt RoHS FEATURES Low gate charge Low CrssB B (typical 7.6pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking Package Halogen Free JCS2N60V-O-V-N-B JCS2N60R-O-R-N-B JCS2N60R-O-R-N-A JCS2N60C-O-C-N-B JCS2N60F-O-F-N-B JCS2N60V-R-V-N-B JCS2N60V JCS2N60R JCS2N60R JCS2N60C JCS2N60F JCS2N60V IPAK DPAK DPAK TO-220C TO-220MF IPAK NO NO NO NO NO YES Packaging Tube Tube Reel Tube Tube Tube Device Weight 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ) 0.35 g(typ) ：201501F 1/12 R ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol Value JCS2N60V/R JCS2N60C － Drain-Source Voltage VDSSB B 600 Drain Current-continuous IDB T=25℃ B T=100℃ 1.9 1.1 2.0 1.3 （ 1） Drain Current – pulse IDMB B （note 1） 6.0 Gate-Source Voltage VGSSB B ±30 （ 2） Single Pulsed Avalanche Energy（note 2） EASB B 120 （ 1） Avalanche Current(note 1) IARB B 2.0 （ 1） Repetitive Avalanche Energy （note 1） EARB B 5.4 （ 3） Peak Diode Recovery Dv/dt （note 3） dv/dt 5.5 Power Dissipation P T =25℃D CB B B B -Derate above 25℃ 44 0.35 54 0.43 Operating and Storage T ，TJ STGB B BB Temperature Range -55～+150 Maximum Lead ...