2SC6067

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC6067 ○ Medium Power Amplifier Applications ○ Strobe Flash Applications 2SC6067 Unit: mm ・ Low Saturation Voltage: VCE (sat) = 0.3 V (max) (@ IC=3A / IB=60mA） Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current DC Pulsed Collector power dissipation Junction temperature VCBO VCEO VEBO IC ICP PC (Note1) Tj 15 10 6 5 9 550 150 V V V A mW °C 1. Emitter 2. Collector Mini 3. Base Storage temperature range Tstg −55 to 150 °C JEDEC ― Note 1: When a device is mounted on a glass epoxy board (35 mm × 30 mm × 1mm) Note: Using continuously under heavy loads (e.g. the application of JEITA TOSHIBA － 2-4E1A high temperature/current/voltage and the significant change in Weight: 0.13 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-Emitter breakdown voltage DC cur...