BL2302

Production specification N-Channel Enhancement Mode Field Effect Transistor BL2302 FEATURES z 20V/3.6A,RDS(ON)=85m_@VGS=4.5V. Pb z 20V/3.1A,RDS(ON)=115m_@VGS=2.5V. Lead-free z Super high density cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability. APPLICATIONS z Power Management in Notebook. z Portable Equipment. z DC/DC Converter. ORDERING INFORMATION SOT-23 Type No. BL2302 Marking A2T Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 20 VGSS ID IDM Gate -Source voltage Maximum Drain current TA=25℃ TA=70℃ Pulsed Drain current ±8 2.8 2.2 10 PD Power Dissipation 1.25 RθJA Thermal resistance,Junction-to-Ambient 105 TJ Operating Junction Temperature 150 Units V V A A W ℃/W ℃ C217 Rev.A www.gmicroelec.com 1 Production specification N-Channel Enhancement Mode Field Effect Transistor BL2302 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current On-state Drain Current Symbol V(BR)DSS VGS(th) IGSS IDSS ID(On) Test conditions VGS=0V,ID=250μA VDS=VGS, ID=250μA VDS=0V, VGS=8V VDS=0V, VGS=-8V VDS=20V, VGS=0V VDS=20V,VGS=0V,Tj=55℃ VGS=4.5V, VDS≥5.0V VGS=2.5V, VDS≥5.0V MIN TYP MAX UNIT 20 - - 0.6 0.9 1.2 V - - 100 -100 nA - - 1 μA - - 10 6 4A Drain-Source on-resistance Diode forward voltage Total Gat...