BL2301

s Production specification P-Channel Enhancement Mode Field Effect Transistor BL2301 FEATURES z RDS(ON)≤110mΩ@VGS=-4.5V. Pb z RDS(ON)≤150mΩ@VGS=-2.5V. Lead-free z Super high density cell design for extremely low RDS(ON). APPLICATIONS z Power Management in Note book. z Portable Equipment. z Battery Powered System. z Load Switch. z DSC. ORDERING INFORMATION SOT-23 Type No. BL2301 Marking A1T Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage -20 VGSS ID IDM PD RθJA Gate -Source voltage Maximum Drain current TA=25℃ TA=70℃ Pulsed Drain current Power Dissipation TA=25℃ TA=70℃ Thermal resistance,Junction-to-Ambient ±8 -2.0 -1.6 -10 0.7 0.45 175 TJ,Tstg Operating Junction and StorageTemperature 175 Units V V A A W ℃/W ℃ C229 Rev.A www.gmicroelec.com 1 s Production specification P-Channel Enhancement Mode Field Effect Transistor BL2301 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current Symbol V(BR)DSS VGS(th) IGSS IDSS Test conditions VGS=0V,ID=-250μA VDS=VGS, ID=-250μA VDS=0V, VGS=8V VDS=0V, VGS=-8V VDS=-20V, VGS=0V MIN -20 -0.4 - TYP - -0.6 - Drain-Source on-resistance RDS(ON) VGS=-4.5V,ID=-2.8A VGS=-2.5V,ID=-2.0A - 90 - 110 Diode forward voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input capacitance Output...