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MT29F32G08MAA Dataheets PDF



Part Number MT29F32G08MAA
Manufacturers Micron
Logo Micron
Description NAND Flash Memory
Datasheet MT29F32G08MAA DatasheetMT29F32G08MAA Datasheet (PDF)

Micron Confidential and Proprietary Advance‡ 32Gb, 64Gb, 128Gb: NAND Flash Features NAND Flash Memory MT29F32G08MAA ES, MT29F32G08CBAAA, MT29F64G08CFAAA, MT29F64G08CEAAA, MT29F128G08TAA ES, MT29F128G08CJAAA, MT29F128G08CKAAA Features • Open NAND Flash Interface (ONFI) 2.0-compliant • Multilevel cell (MLC) technology • Organization Page size: x8: 4314 bytes (4096 + 218 bytes) – Block size: 128 pages (512K + 27K bytes) – Plane size: 4096 blocks – Device size: 32Gb, 8192 blocks; 64Gb, 16,384 bl.

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Micron Confidential and Proprietary Advance‡ 32Gb, 64Gb, 128Gb: NAND Flash Features NAND Flash Memory MT29F32G08MAA ES, MT29F32G08CBAAA, MT29F64G08CFAAA, MT29F64G08CEAAA, MT29F128G08TAA ES, MT29F128G08CJAAA, MT29F128G08CKAAA Features • Open NAND Flash Interface (ONFI) 2.0-compliant • Multilevel cell (MLC) technology • Organization Page size: x8: 4314 bytes (4096 + 218 bytes) – Block size: 128 pages (512K + 27K bytes) – Plane size: 4096 blocks – Device size: 32Gb, 8192 blocks; 64Gb, 16,384 blocks; 128Gb, 32,768 blocks • READ performance – Random read: 50µs – Sequential read: 20ns • PROGRAM performance – Page program: 900µs (TYP) – Block erase: 3ms (TYP) • Endurance: 10,000 PROGRAM/ERASE cycles1 • First block (block address 00h) guaranteed to be valid with ECC when shipped from factory1 • Industry-standard basic NAND Flash command set • Advanced command set – PROGRAM PAGE CACHE MODE – PAGE READ CACHE MODE – Two-plane commands – Interleaved die operations – READ UNIQUE ID • Operation status byte provides a software method of detecting: – Operation completion – Pass/fail condition – Write-protect status • Ready/busy# (R/B#) signal provides a hardware method of detecting PROGRAM and ERASE cycle completion • WP# signal: entire-device hardware write protect • RESET required as first command after power-up • INTERNAL DATA MOVE operations supported within the plane from which data is read Figure 1: 48-Pin TSOP Type 1 Options • Density2: 32Gb, 64Gb, 128Gb • Device width: x8 • Configuration: # of die # of CE# # of R/B# I/O TSOP 11 1 Common TSOP 22 2 Common TSOP 42 2 Common LGA 22 2 Separate LGA 42 2 Separate • Vcc: 2.7V–3.6 V • Package: 48-pin TSOP type I (lead-free plating), 52-pad LGA • Operating temperature: – Commercial temperature (0°C to +70°C) – Extended temperature (–40°C to +85°C) Notes: 1. For details, see “Error Management” on page 89. 2. For part numbering and markings, see Figure 2 on page 2. PDF: 09005aef8331b189 / Source: 09005aef8331b1c4 32gb_nand_mlc_l63a__1.fm - Rev. A 12/08 EN 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2008 Micron Technology, Inc. All rights reserved. ‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications. Micron Confidential and Proprietary Advance 32Gb, 64Gb, 128Gb: NAND Flash Part Numbering Information Part Numbering Information Micron NAND Flash devices are available in different configurations and densities (see Figure 2). Figure 2: Part Number Chart for 32Gb, 64Gb TSOP Engineering Samples Micron Technology MT 29F 32G 08 M A A WC Product Family 29F = Single-supply NAND Flash memory Density 32G = 32Gb 64G = 64Gb Device Width 08 = 8 bits Classification # of die # of CE# # of R/B# M1 1 1 T4 2 2 I/O Common Common Operating Voltage Range A = 3.3V (2.7–3.6V) Feature Set A = Feature set A ES :A Design Revision A = First revision Production Status ES = Engineering sample Operating Temperature Range Blank = Commercial (0°C to +70°C) ET = Extended (–40°C to +85°C) Reserved for Future Use Blank NAND Flash Performance Blank = Standard Package Code WC = 48-pin TSOP I (lead-free) PDF: 09005aef8331b189 / Source: 09005aef8331b1c4 32gb_nand_mlc_l63a__1.fm - Rev. A 12/08 EN 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2008 Micron Technology, Inc. All rights reserved. Micron Confidential and Proprietary Advance 32Gb, 64Gb, 128Gb: NAND Flash Part Numbering Information Figure 3: Part Number Chart MT 29F 32G 08 C B A A A WC Micron Technology Product Family 29F = Single-supply NAND Flash memory Density 32G = 32Gb 64G = 64Gb 128G = 128Gb Device Width 08 = 8 bits Cell Type C = MLC-2 Classification # of die # of CE# B1 1 E2 2 F2 2 J4 2 K4 2 # of R/B# 1 2 2 2 2 I/O 1 2 1 1 2 Operating Voltage Range A = 3.3V (2.7–3.6V) :A Design Revision A = First revision Production Status Blank = Production Reserved for Future Use Blank Operating Temperature Range Blank = Commercial (0°C to +70°C) ET = Extended (–40°C to +85°C) WT = Wireless (–25°C to +85°C) Speed Grade Blank (if no grade defined) Package Code WC = 48-pin OCPL TSOP I (lead-free) WP = 48-pin CPL TSOP I (lead-free) C5 = 52-pad VLGA 14mm x 18mm x 1mm (lead-free) Interface A = Async only Feature Set A = Feature set A Valid Part Number Combinations After building the part number from the part numbering chart, verify that the part number is offered and valid by using the Micron Parametric Part Search Web site at www.micron.com/products/parametric. If the device required is not on this list, contact the factory. PDF: 09005aef8331b189 / Source: 09005aef8331b1c4 32gb_nand_mlc_l63a__1.fm - Rev. A 12/08 EN 3 Micron Technology, Inc., reserves the right to change products or specifications without .


PT2348 MT29F32G08MAA MT29F32G08CBAAA


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