JS29F64G08CAMDB

Intel® MD332B NAND Flash Memory JS29F32G08AAMDB, JS29F64G08CAMDB, JS29F16B08JAMDB Product Features Preliminary Datasheet „ Open NAND Flash Interface (ONFI) 2.0 „ Core Voltage (VCC): 2.7 V - 3.6 V Compliant „ Multilevel cell (MLC) technology „ First block (block address 00h) guaranteed to be valid when shipped from factory „ Organization: „ Ready/busy# (R/B#) signal provides a — Page size: 4,320 bytes (4,096 + 224 bytes) hardware method of detecting PROGRAM or — Block size: 256 pages (1,024K + 56K bytes) ERASE cycle completion — Plane size: 2,048 blocks „ Read performance — Random read: 50 µs — Sequential read: 20 ns „ Write performance „ WP# signal: Entire device hardware write protect „ Advanced command set: — PAGE CACHE PROGRAM — READ CACHE (RANDOM, SEQUENTIAL, END) — Page program: 900 µs (TYP) — Multi-plane commands — Block erase: 2 ms (TYP) „ Operation status byte provides a software „ Endurance: method of detecting: — 5,000 PROGRAM/ERASE cycles — Operation completion — Data Retention: JEDEC compliant „ Operating Temperature: — Pass/fail condition — Write-protect status — Commercial: 0°C to +70°C — Extended: -40°C to +85°C Density 32 Gb 64 Gb 128 Gb Package TSOP TSOP TSOP # of Die SDP DDP QDP 1 2 4 # of CE# and R/B# 1 2 4 Bus I/O Configuration single x8 single x8 single x8 Device ID 89h, 68h, 04h, 46h, A9h 89h, 68h, 04h, 46h, A9h 89h, 68h, 04h, 46h, A9h Intel Confidential Document Number: 320844-002US May 2009 L egal Lines and Disclaim e...