IPD50N06S3L-08

IPD50N06S3L-08 OptiMOS®-T Power-Transistor Features N-channel - Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Product Summary V DS R DS(on),max ID 55 V 7.8 mΩ 50 A PG-TO252-3-11 Type IPD50N06S3L-08 Package Marking PG-TO252-3-11 3N06L08 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse2) E AS I D=25 A Avalanche current, single pulse I AS Gate source voltage3) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 50 50 200 370 50 ±16 107 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.1 page 1 2009-05-20 IPD50N06S3L-08 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area4) min. Values typ. Unit max. - - 1.4 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=55 µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V...