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IPD50N06S4L-08

Infineon

Power Transistor

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow...


Infineon

IPD50N06S4L-08

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Description
OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested IPD50N06S4L-08 Product Summary V DS R DS(on),max ID 60 V 7.8 mΩ 50 A PG-TO252-3-11 Type IPD50N06S4L-08 Package Marking PG-TO252-3-11 4N06L08 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=25A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 50 47 200 87 50 ±16 71 -55 ... +175 55/175/56 Unit A mJ A V W °C − Rev. 1.0 page 1 2009-03-24 IPD50N06S4L-08 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) min. Values typ. Unit max. - - 2.1 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=35µA I DSS V DS=60V, V GS=0V, T j=25°C V...




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