IPD50N06S4L-12

OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested IPD50N06S4L-12 Product Summary V DS R DS(on),max ID 60 V 12 mΩ 50 A PG-TO252-3-11 Type IPD50N06S4L-12 Package Marking PG-TO252-3-11 4N06L12 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=25A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 50 36 200 33 50 ±16 50 -55 ... +175 55/175/56 Unit A mJ A V W °C − Rev. 1.0 page 1 2009-03-23 IPD50N06S4L-12 Parameter Symbol Conditions Thermal characteristics1) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) min. Values typ. Unit max. - - 3.0 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=20µA I DSS V DS=60V, V GS=0V, T j=25°C V DS...