Type
IPD50P04P4-13
OptiMOS®-P2 Power-Transistor
Features • P-channel - Normal Level - Enhancement mode • AEC qualified...
Type
IPD50P04P4-13
OptiMOS®-P2 Power-
Transistor
Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested
Product Summary VDS RDS(on) ID
-40 V 12.6 mW -50 A
PG-TO252-3-313
Tab
1 3
Gate pin 1
Source pin 3
Type IPD50P04P4-13
Package
Marking
PG-TO252-3-313 4P0413
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C, V GS=-10V
T C=100°C, V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=-25A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Drain pin 2/Tab
Value
-50
-45
-200 18 -50 ±20 58 -55 ... +175 55/175/56
Unit A
mJ A V W °C
Rev. 1.3
page 1
2019-07-16
IPD50P04P4-13
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
Values
Unit
min. typ. max.
- - 2.6 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= -...
