IPD50R520CP

Type CoolMOSTM Power Transistor Package Lowest figure of merit RON x Qg Ultra low gate charge Extreme dv/dt rated High peak current capability Pb-free lead plating; RoHS compliant Quailfied according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ IPD50R520CP 550 V 0.520 Ω 13 nC PG-TO252 CoolMOS CP is designed for: Hard- & Softswitching SMPS topologies DCM PFC for Lamp ballast PWM for Lamp Ballast, PDP and LCD TV Type IPD50R520CP Package PG-TO252 Marking 5R520P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness Gate source voltage ID I D,pulse E AS E AR I AR dv /dt V GS T C=25 °C T C=100 °C T C=25 °C I D=2.5 A, V DD=50 V I D=2.5 A, V DD=50 V V DS=0...400 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg Value 7.1 4.5 15 166 0.25 2.5 50 ±20 ±30 66 -55 ... 150 Unit A mJ A V/ns V W °C Rev. 2.1 page 1 2008-04-10 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse T C=25 °C dv /dt IPD50R520CP Value 3.8 15 15 Unit A V/ns Parameter Symbol Conditions Thermal characteristics Thermal resistance, ...