SPD50N06S2L-13

OptiMOS® Power-Transistor Feature N-Channel Enhancement mode Logic Level Avalanche rated dv/dt rated SPD50N06S2L-13 Product Summary VDS 55 V RDS(on) 12.7 mΩ ID 50 A P- TO252 -3-11 Type Package Ordering Code Marking SPD50N06S2L-13 P- TO252 -3-11 Q67060- S7421 PN06L13 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) ID TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=50 A , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=50A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 50 50 200 240 13.6 6 ±20 136 -55... +175 55/175/56 Unit A mJ kV/µs V W °C Page 1 2003-05-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) SPD50N06S2L-13 Symbol Values Unit min. typ. max. RthJC RthJA RthJA - 0.69 1.1 K/W - - 100 - - 75 - - 50 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V(BR)DSS 55 - -V VGS=0V, ID=1mA Gate threshold voltage, VGS = VDS VGS(th) 1.2 1.6 2 ID=80µA Zero gate voltage drain current VDS=55V, VGS=0V,...