STP9437

STP9437 P Channel Enhancement Mode MOSFET - 5.7A DESCRIPTION STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management, and other battery powered circuits where higt-side switching. PIN CONFIGURATION SOP-8 FEATURE � -30V/-5.7A, RDS(ON) = 45mΩ (Typ.) @VGS = -10V � -30V/-5.0A, RDS(ON) = 50mΩ @VGS = -4.5V � -30V/-4.4A, RDS(ON) = 65mΩ @VGS = -2.5V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � SOP-8 package design PART MARKING SOP-8 Y: Year Code A: Date Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9437 2010. V1 STP9437 P Channel Enhancement Mode MOSFET - 5.7A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VGSS ID IDM Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical -30 ±12 -6.8 -4.6 -30 -2.3 2.8 1.8 -55/150 -55/150 70 Unit V V A A A W ℃ ℃...