A1270 Transistor Datasheet

A1270 Datasheet, PDF, Equivalent


Part Number

A1270

Description

PNP Silicon Epitaxial Planar Transistor

Manufacture

SEMTECH

Total Page 2 Pages
Datasheet
Download A1270 Datasheet


A1270
ST 2SA1270
PNP Silicon Epitaxial Planar Transistor
for switching and general purpose applications.
The transistor is subdivided into two groups O and Y
according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T a=25oC)
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-VCBO
-VCEO
-VEBO
-IC
-IB
Ptot
Tj
TS
G S P FORM A IS AVAILABLE
Value
35
30
5
500
100
500
150
-55 to +150
Unit
V
V
V
mA
mA
mW
OC
OC
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805
Факс: (495) 234-1603
Эл. почта: info@rct.ru
Веб: www.rct.ru
®

A1270
ST 2SA1270
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
DC Current Gain
at -VCE=1V, -IC=100mA
Current Gain Group O
Y
at -VCE=6V, -IC=400mA
O
Y
Collector Cutoff Current
at -VCB=35V
Emitter Cutoff Current
at -VEB=5V
Collector Emitter Saturation Voltage
at -IC=100mA,-IB=10mA
Base Emitter Voltage
at –VCE=1V,-IC=100mA
Transition Frequency
at -VCE=6V, -IC=20mA
Collector Output Capacitance
at -VCB=6V, f=1MHz
hFE
hFE
hFE
hFE
-ICBO
-IEBO
-VCEsat
-VBE
fT
COB
70
120
25
40
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.8
200
13
G S P FORM A IS AVAILABLE
Max.
140
240
-
-
0.1
0.1
0.25
1.0
-
-
Unit
-
-
-
-
µA
µA
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
® listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/12/2002


Features ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general pu rpose applications. The transistor is s ubdivided into two groups O and Y accor ding to its DC current gain. On special request, these transistors can be manu factured in different pin configuration s. TO-92 Plastic Package Weight approx . 0.19g Absolute Maximum Ratings (T a= 25oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Co llector Current Base Current Power Diss ipation Junction Temperature Storage Te mperature Range Symbol -VCBO -VCEO -VE BO -IC -IB Ptot Tj TS G S P FORM A IS AVAILABLE Value 35 30 5 500 100 500 15 0 -55 to +150 Unit V V V mA mA mW OC O C РАДИОТЕХ-ТРЕЙД Тел. : (495) 795-0805 Факс: (495) 234-16 03 Эл. почта: info@rct.ru Веб : www.rct.ru ® ST 2SA1270 Character istics at Tamb=25 OC Symbol Min. Typ . DC Current Gain at -VCE=1V, -IC=100 mA Current Gain Group O Y at -VCE=6V, -IC=400mA O Y Collector Cutoff Current at -VCB=35V Emitter Cutoff Current at -VEB=5V Coll.
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