MS1076

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS GOLD METALLIZATION POUT = 220 W PEP GP = 12 dB GAIN MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die geometry for maximum ruggedness and reliability. MS1076 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCEO VEBO IC PDISS TJ TSTG Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Thermal Data RTH(J-C) Junction - Case Thermal Resistance Rev A: October 2009 Value 70 35 4.0 16 250 +200 - 65 to +150 0.7 Unit V V V A W °C °C °C/W Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol Test Conditions BVCES BVCEO BVEBO ICEO ICES HFE IC = 100 mA IC = 200 mA IE = 20 mA VCE = 30 V VCE = 35 V VCE = 5 V, IC = 7 A MS1076 Min. 70 35 4.0 ----15 Value Typ. ------------- Max. ------5 5 60 Unit V V V mA mA --- DYNAMIC Symbol Test Conditions POUT GP ηC IMD COB Conditions f = 30 MHz f = 30 MHz f = 30 MHz f = 30 MHz f = 1 MHz f1 = 30.000 MHz VCE = 28 V ICQ = 750 mA VCE = 28 V ICQ = 750 mA VCE = 28 V ICQ = 750 mA VCE = 28 V ICQ = 750...