2N7002

DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors N-channel vertical D-MOS transistor Product specification 2N7002 FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. It is designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits, with applications in relay, high-speed and line transformer drivers. PINNING - SOT23 PIN DESCRIPTION 1 gate 2 source 3 drain QUICK REFERENCE DATA SYMBOL PARAMETER VDS ID RDS(on) drain-source voltage drain current drain-source on-resistance VGS(th) gate-source threshold voltage CONDITIONS DC value ID = 500 mA VGS = 10 V ID = 1 mA VGS = VDS MAX. UNIT 60 V 180 mA 5Ω 3V PIN CONFIGURATION ook, halfpage 3 handbook, 2 columns d 1 Top view 2 MSB003 g MBB076 - 1 s Marking code: 702 Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors N-channel vertical D-MOS transistor Product specification 2N7002 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS VDS ±VGSO ID IDM Ptot drain-source voltage gate-source voltage drain current drain current total power dissipation Tstg storage temperature range Tj junction temperature open drain DC value peak value Tamb = 25 °C (note 1) (note 2) Not...