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IRFR3711Z Dataheets PDF



Part Number IRFR3711Z
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRFR3711Z DatasheetIRFR3711Z Datasheet (PDF)

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current VDSS 20V PD - 94651B IRFR3711Z IRFU3711Z HEXFET® Power MOSFET RDS(on) max Qg 5.7m: 18nC D-Pak IRFR3711Z I-Pak IRFU3711Z Absolute Maximum Ratings Parameter VDS Drain-to-Source Volt.

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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current VDSS 20V PD - 94651B IRFR3711Z IRFU3711Z HEXFET® Power MOSFET RDS(on) max Qg 5.7m: 18nC D-Pak IRFR3711Z I-Pak IRFU3711Z Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ™Continuous Drain Current, VGS @ 10V Pulsed Drain Current gMaximum Power Dissipation gMaximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter RθJC Junction-to-Case gÃRθJA Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient Notes  through … are on page 11 www.irf.com Max. 20 ± 20 93f 66f 370 79 39 0.53 -55 to + 175 300 (1.6mm from case) Typ. ––– ––– ––– Max. 1.9 50 110 Units V A W W/°C °C Units °C/W 1 3/2/04 IRFR/U3711Z Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA Breakdown Voltage Temp. Coefficient ––– 13 ––– mV/°C Reference to 25°C, ID = 1mA eStatic Drain-to-Source On-Resistance ––– 4.5 5.7 mΩ VGS = 10V, ID = 15A ––– 6.2 7.8 eVGS = 4.5V, ID = 12A Gate Threshold Voltage 1.55 2.0 2.45 V VDS = VGS, ID = 250µA Gate Threshold Voltage Coefficient ––– -5.4 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 16V, VGS = 0V ––– ––– 150 VDS = 16V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 48 ––– ––– S VDS = 10V, ID = 12A Qg Total Gate Charge ––– 18 27 Qgs1 Qgs2 Qgd Qgodr Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive ––– 5.1 ––– VDS = 10V ––– 1.8 ––– nC VGS = 4.5V ––– 6.5 ––– ID = 12A ––– 4.6 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 8.3 ––– Qoss td(on) tr td(off) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ––– 9.8 ––– nC VDS = 10V, VGS = 0V ––– 12 ––– eVDD = 15V, VGS = 4.5V ––– 13 ––– ID = 12A ––– 15 ––– ns Clamped Inductive Load tf Fall Time ––– 5.2 ––– Ciss Input Capacitance ––– 2160 ––– VGS = 0V Coss Output Capacitance ––– 700 ––– pF VDS = 10V Crss Reverse Transfer Capacitance ––– 360 ––– ƒ = 1.0MHz Avalanche Characteristics Parameter dEAS Single Pulse Avalanche Energy ÙIAR Avalanche Current ™EAR Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 140 12 7.9 Units mJ A mJ Diode Characteristics Parameter IS Continuous Source Current fMin. Typ. Max. Units .


2N7002 IRFR3711Z IRFU3711Z


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