Document
Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power l High Frequency Isolated DC-DC
Converters with Synchronous Rectification for Telecom and Industrial Use
Benefits
l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
and Current
VDSS
20V
PD - 94651B
IRFR3711Z IRFU3711Z
HEXFET® Power MOSFET
RDS(on) max Qg
5.7m:
18nC
D-Pak IRFR3711Z
I-Pak IRFU3711Z
Absolute Maximum Ratings
Parameter VDS Drain-to-Source Voltage
VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
gMaximum Power Dissipation gMaximum Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
gÃRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Notes through
are on page 11
www.irf.com
Max. 20 ± 20
93f 66f
370 79 39 0.53 -55 to + 175
300 (1.6mm from case)
Typ. ––– ––– –––
Max. 1.9 50 110
Units V
A W W/°C °C
Units °C/W
1
3/2/04
IRFR/U3711Z
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS ∆ΒVDSS/∆TJ RDS(on)
VGS(th) ∆VGS(th)/∆TJ
Drain-to-Source Breakdown Voltage
20 ––– ––– V VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient ––– 13 ––– mV/°C Reference to 25°C, ID = 1mA
eStatic Drain-to-Source On-Resistance ––– 4.5 5.7 mΩ VGS = 10V, ID = 15A
––– 6.2 7.8
eVGS = 4.5V, ID = 12A
Gate Threshold Voltage
1.55 2.0 2.45 V VDS = VGS, ID = 250µA
Gate Threshold Voltage Coefficient
––– -5.4 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 16V, VGS = 0V
––– ––– 150
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
48 ––– ––– S VDS = 10V, ID = 12A
Qg Total Gate Charge
––– 18 27
Qgs1 Qgs2 Qgd Qgodr
Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive
––– 5.1 –––
VDS = 10V
––– 1.8 ––– nC VGS = 4.5V
––– 6.5 –––
ID = 12A
––– 4.6 –––
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 8.3 –––
Qoss td(on) tr td(off)
Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time
––– 9.8 ––– nC VDS = 10V, VGS = 0V
––– 12 –––
eVDD = 15V, VGS = 4.5V
––– 13 –––
ID = 12A
––– 15 ––– ns Clamped Inductive Load
tf Fall Time
––– 5.2 –––
Ciss Input Capacitance
––– 2160 –––
VGS = 0V
Coss Output Capacitance
––– 700 ––– pF VDS = 10V
Crss
Reverse Transfer Capacitance
––– 360 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy ÃIAR Avalanche Current EAR Repetitive Avalanche Energy
Typ. ––– ––– –––
Max. 140 12 7.9
Units mJ A mJ
Diode Characteristics
Parameter IS Continuous Source Current
fMin. Typ. Max. Units
.