STAR1000

STAR1000 STAR1000 1M Pixel Radiation Hard CMOS Image Sensor Key Features The STAR1000 sensor has the following characteristics: Integrating 3-transistor Active Pixel Sensor. 1024 by 1024 pixels on 15 µm pitch. Radiation tolerant design. On-chip double sampling circuit to cancel Fixed Pattern Noise. Electronic shutter. Read out rate: up to 11 full frames per second. Region Of Interest (ROI) windowing. On-chip 10-bit ADC. Programmable gain amplifier. Ceramic JLCC-84 package. Available with BK7G18 glass and with N2 filled cavity. Sensor Description The STAR1000 is a CMOS image sensor with 1024 by 1024 pixels on a 15 mm pitch. It features on-chip Fixed Pattern Noise (FPN) correction, a programmable gain amplifier, and a 10-bit Analog-to-Digital Converter (ADC). All circuits are designed using the radiation tolerant design rules for CMOS image sensors, to allow a high tolerance against total dose effects. Registers that are directly accessed by the external controller contain the X- and Y- addresses of the pixels to be read. This architecture provides flexible operation and allows different operation modes such as (multiple) windowing, subsampling, etc. Two versions od sensors are available: STAR1000 and STAR1000BK7. The STAR1000 has a quartz glass lid and the cavity between the die and the lid is filled with air. The STAR1000BK7 has a BK7G18 glass lid and the cavity is filled with N2 which increases the temperature operating range. Cypress Semiconductor Cor...