KTD2059

SEMICONDUCTOR TECHNICAL DATA KTD2059 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES ᴌComplementary to KTB1367. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 100 5 5 0.5 30 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ O Q A U E K LL M DD NN T T 123 J GF B P C DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 2.70Ź0.30 S D 0.85 MAX E Ѹ3.20Ź0.20 F 3.00Ź0.30 G 12.30 MAX T RH 0.75 MAX J 13.60Ź0.50 K 3.90 MAX L 1.20 VM N 1.30 2.54 O 4.50Ź0.20 P 6.80 Q 2.60Ź0.20 HR S 10Ɓ 25Ş T 5Ş U 0.5 V 2.60Ź0.15 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat) VBE fT VCB=100V, IE=0 VEB=5V, IC=0 IC=50mA, IB=0 VCE=5V, IC=1A VCE=5V, IC=4A IC=4A, IB=0.4A VCE=5V, IC=1A VCE=5V, IC=1A Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz Note : hFE(1) Classification R:40ᴕ80, O:70ᴕ140, Y:120ᴕ240 MIN. - 100 40 20 - TYP. 12 100 MAX. 100 1.0 240 2.0 1.5 - UNIT ỌA mA V V V MHz pF 1995. 2. 24 Revision No : 1 1/2 COLLECTOR CURRENT IC (A) ...