TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3267
Power Amplifier Applications Power Switching Applica...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process)
2SC3267
Power Amplifier Applications Power Switching Applications
2SC3267
Unit: mm
· Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A · Complementary to 2SA1297
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
20 20 6 2 0.5 400 150 -55~150
Unit
V V V A A mW °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = 20 V, IE = 0
IEBO
VEB = 6 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
V (BR) EBO IE = 0.1 mA, IC = 0
hFE (1) (Note)
VCE = 2 V, IC = 100 mA
hFE (2) VCE (sat)
VBE fT Cob
VCE = 2 V, IC = 2 A IC = 2 A, IB = 0.1 A VCE = 2 V, IC = 0.1 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification Y: 120~240, GR: 200~400, BL: 350~700
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 0.1 mA
20 ¾ ¾
V
6 ¾¾ V
120 ¾ 700
75 ¾ ¾
¾ ¾ 0.5 V
¾
¾ 0.85
V
¾ 120 ¾ MHz
¾ 30 ¾ pF
1 2003-03-25
2SC3267
2 2003-03-25
2SC3267
RESTRICTIONS ON P...