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A1480 Dataheets PDF



Part Number A1480
Manufacturers Sanyo
Logo Sanyo
Description 2SA1480
Datasheet A1480 DatasheetA1480 Datasheet (PDF)

Ordering number:ENN2254 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1480/2SC3790 High-Definiton CRT Display Video Output Applications Features · High breakdown voltage (VCEO≥300V). · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process. Package Dimensions unit:mm 2042B [2SA1480/2SC3790] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0 1.6 0.8 0.8 0.75 0.7 ( ) : 2SA1480 Specifications Absolute .

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Ordering number:ENN2254 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1480/2SC3790 High-Definiton CRT Display Video Output Applications Features · High breakdown voltage (VCEO≥300V). · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process. Package Dimensions unit:mm 2042B [2SA1480/2SC3790] 8.0 4.0 1.0 1.0 3.3 1.5 1.4 3.0 7.5 15.5 11.0 3.0 1.6 0.8 0.8 0.75 0.7 ( ) : 2SA1480 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)200V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)10V, IC=(–)10mA Gain-Bandwidth Product fT VCE=(–)30V, IC=(–)10mA * : The 2SA1480/2SC3790 are classified by 10mA hFE as follows : Rank C D E F hFE 40 to 80 60 to 120 100 to 200 160 to 320 123 2.4 4.8 1.7 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML Ratings (–)300 (–)300 (–)5 (–)100 (–)200 1.5 7 150 –55 to +150 Unit V V V mA mA W W ˚C ˚C Ratings min typ max Unit (–)0.1 µA (–)0.1 µA 40* 320* 150 MHz Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O3103TN (KT)/71598HA (KT)/4087TA, TS No.2254-1/5 Continued from preceding page. Parameter Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage 2SA1480/2SC3790 Symbol Conditions Cob VCB=(–)30V, f=1MHz Cre VCB=(–)30V, f=1MHz VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO IC=(–)20mA, IB=(–)2mA IC=(–)20mA, IB=(–)2mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 Ratings min typ 2.6 (3.1) 1.8 (2.3) (–)300 (–)300 (–)5 max (–)0.6 (–)1.0 Unit pF pF pF pF V V V V V Collector Current, IC – mA Collector Current, IC – mA --20 2SA1480 --18 --16 --14 --12 IC -- VCE --140µA --120µA --100µA --80µA --10 --60µA --8 --6 --40µA --4 --20µA --2 IB=0 00 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 Collector-to-Emitter Voltage, VCE – V ITR03783 --10 2SA1480 IC -- VCE --9 --60µA --8 --50µA --7 --40µA --6 --5 --30µA --4 --20µA --3 --2 --10µA --1 IB=0 0 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 Collector-to-Emitter Voltage, VCE – V ITR03785 --120 2SA1480 IC -- VBE VCE=--10V --100 --80 --60 --40 --20 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE – V ITR03787 Ta=75°C 25°C --25°C Collector Current, IC – mA Collector Current, IC – mA Collector Current, IC – mA 20 2SC3790 18 16 IC -- VCE 120µA 100µA 14 80µA 12 10 60µA 8 40µA 6 4 20µA 2 IB=0 0 0 1 2 3 4 5 6 7 8 9 10 Collector-to-Emitter Voltage, VCE – V ITR03784 10 2SC3790 IC -- VCE 9 60µA 8 50µA 7 40µA 6 5 30µA 4 20µA 3 2 10µA 1 0 IB=0 0 10 20 30 40 50 60 70 80 90 100 Collector-to-Emitter Voltage, VCE – V ITR03786 120 2SC3790 IC -- VBE VCE=10V 100 Ta=75°C 25°C --25°C 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE – V ITR03788 No.2254-2/5 Collector Current, IC – mA DC Current Gain, hFE 2SA1480/2SC3790 1000 7 5 3 2 100 7 5 3 2 hFE -- IC Ta=75°C 25°C --25°C 2SA1480 VCE=--10V 10 5 7 --1.0 1000 7 5 2 3 5 7 --10 2 3 5 7 --100 2 Collector Current, IC – mA ITR03789 fT -- IC 2SA1480 VCE=--30V DC Current Gain, hFE 1000 7 5 3 2 100 7 5 3 2 hFE -- IC Ta=75°C 25°C --25°C 2SC3790 VCE=10V 10 7 55 7 1.0 1000 7 5 2 3 5 7 10 2 3 5 7 100 2 Collector Current, IC – mA ITR03790 fT -- IC 2SC3790 VCE=30V 33 22 Gain-Bandwidth Product, fT – MHz 100 7 5 3 2 100 7 5 3 2 10 5 7 --1.0 3 2 2 3 5 7 --10 2 3 5 7 --100 2 Collector Current, IC – mA ITR03791 Cob -- VCB 2SA1480 f=1MHz 10 5 7 1.0 3 2 2 3 5 7 10 2 3 5 7 100 2 Collector Current, IC – mA ITR03792 Cob -- VCB 2SC3790 f=1MHz Gain-Bandwidth.


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