Document
Ordering number:ENN2254
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1480/2SC3790
High-Definiton CRT Display Video Output Applications
Features
· High breakdown voltage (VCEO≥300V). · Small reverse transfer capacitance and excellent high
frequency characteristic
: Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process.
Package Dimensions
unit:mm
2042B
[2SA1480/2SC3790]
8.0 4.0
1.0 1.0
3.3
1.5 1.4
3.0 7.5 15.5 11.0
3.0
1.6 0.8
0.8 0.75 0.7
( ) : 2SA1480
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current
Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP
PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)200V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)10V, IC=(–)10mA
Gain-Bandwidth Product
fT VCE=(–)30V, IC=(–)10mA
* : The 2SA1480/2SC3790 are classified by 10mA hFE as follows :
Rank
C
D
E
F
hFE 40 to 80 60 to 120 100 to 200 160 to 320
123
2.4 4.8
1.7
1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML
Ratings (–)300 (–)300 (–)5 (–)100 (–)200 1.5 7 150
–55 to +150
Unit V V V mA mA W W ˚C ˚C
Ratings min typ max
Unit
(–)0.1 µA
(–)0.1 µA
40* 320*
150 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/4087TA, TS No.2254-1/5
Continued from preceding page.
Parameter
Output Capacitance
Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage
2SA1480/2SC3790
Symbol
Conditions
Cob VCB=(–)30V, f=1MHz
Cre VCB=(–)30V, f=1MHz
VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
IC=(–)20mA, IB=(–)2mA IC=(–)20mA, IB=(–)2mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0
Ratings min typ
2.6 (3.1)
1.8 (2.3)
(–)300 (–)300
(–)5
max
(–)0.6 (–)1.0
Unit
pF pF pF pF V V V V V
Collector Current, IC – mA
Collector Current, IC – mA
--20 2SA1480
--18
--16
--14 --12
IC -- VCE
--140µA --120µA
--100µA
--80µA
--10 --60µA --8 --6 --40µA
--4 --20µA
--2
IB=0 00 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Collector-to-Emitter Voltage, VCE – V ITR03783
--10 2SA1480
IC -- VCE
--9 --60µA
--8 --50µA
--7 --40µA --6
--5 --30µA
--4 --20µA
--3
--2 --10µA
--1
IB=0
0 0
--10 --20 --30 --40 --50 --60 --70 --80 --90 --100
Collector-to-Emitter Voltage, VCE – V ITR03785
--120 2SA1480
IC -- VBE
VCE=--10V --100
--80
--60
--40
--20
0 0
--0.2 --0.4 --0.6 --0.8 --1.0
Base-to-Emitter Voltage, VBE – V ITR03787
Ta=75°C 25°C
--25°C Collector Current, IC – mA
Collector Current, IC – mA
Collector Current, IC – mA
20
2SC3790
18
16
IC -- VCE
120µA
100µA
14
80µA
12
10 60µA
8
40µA
6
4 20µA
2
IB=0
0 0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE – V ITR03784
10
2SC3790
IC -- VCE
9 60µA
8 50µA
7 40µA
6
5 30µA
4
20µA
3
2 10µA
1
0 IB=0
0 10 20 30 40 50 60 70 80 90 100
Collector-to-Emitter Voltage, VCE – V ITR03786
120
2SC3790
IC -- VBE
VCE=10V
100
Ta=75°C 25°C
--25°C
80
60 40
20
0 0 0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE – V ITR03788
No.2254-2/5
Collector Current, IC – mA
DC Current Gain, hFE
2SA1480/2SC3790
1000 7 5
3 2
100 7 5
3 2
hFE -- IC
Ta=75°C 25°C --25°C
2SA1480 VCE=--10V
10
5 7 --1.0
1000 7 5
2 3 5 7 --10 2 3 5 7 --100 2
Collector Current, IC – mA
ITR03789
fT -- IC
2SA1480 VCE=--30V
DC Current Gain, hFE
1000 7 5
3 2
100 7 5
3 2
hFE -- IC
Ta=75°C 25°C --25°C
2SC3790 VCE=10V
10 7 55
7 1.0
1000 7 5
2 3 5 7 10
2 3 5 7 100 2
Collector Current, IC – mA
ITR03790
fT -- IC
2SC3790 VCE=30V
33 22
Gain-Bandwidth Product, fT – MHz
100 7 5
3 2
100 7 5
3 2
10
5 7 --1.0
3 2
2 3 5 7 --10 2 3 5 7 --100 2 Collector Current, IC – mA ITR03791
Cob -- VCB
2SA1480
f=1MHz
10 5 7 1.0
3 2
2 3 5 7 10
2 3 5 7 100 2
Collector Current, IC – mA ITR03792
Cob -- VCB
2SC3790 f=1MHz
Gain-Bandwidth.