Ordering number:ENN2254
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1480/2SC3790
High-Definiton CRT Display Video O...
Ordering number:ENN2254
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1480/2SC3790
High-Definiton CRT Display Video Output Applications
Features
· High breakdown voltage (VCEO≥300V). · Small reverse transfer capacitance and excellent high
frequency characteristic
: Cre=1.8pF (
NPN), 2.3pF (
PNP). · Adoption of MBIT process.
Package Dimensions
unit:mm
2042B
[2SA1480/2SC3790]
8.0 4.0
1.0 1.0
3.3
1.5 1.4
3.0 7.5 15.5 11.0
3.0
1.6 0.8
0.8 0.75 0.7
( ) : 2SA1480
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current
Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP
PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)200V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)10V, IC=(–)10mA
Gain-Bandwidth Product
fT VCE=(–)30V, IC=(–)10mA
* : The 2SA1480/2SC3790 are classified by 10mA hFE as follows :
Rank
C
D
E
F
hFE 40 to 80 60 to 120 100 to 200 160 to 320
123
2.4 4.8
1.7
1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML
Ratings (–)300 (–)300 (–)5 (–)100 (–)200 1.5 7 150
–55 to +150
Unit V V V mA mA W W ˚C ˚C
Ratings min typ max
Unit
(–)0.1 µA
(–)0.1 µA
40* 320*
150 MHz
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Any and all SANYO products described or contained herein do not...
