2SA1206 PNP Silicon Epitaxial Planar Transistor
for general purpose amplifier and high speed switching applications.
On ...
2SA1206
PNP Silicon Epitaxial Planar
Transistor
for general purpose amplifier and high speed switching applications.
On special request, these
transistors can be manufactured in different pin configurations.
Features ․High frequency current gain ․High speed switching ․Small output capacitance ․Low collector saturation voltage
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (D.C.) Collector Current (Pulse)* Power Dissipation Junction Temperature Storage Temperature Range *PW≦2ms, Duty Cycle≦50%
Symbol -VCBO -VCEO -VEBO
-IC -IC Ptot Tj TS
Value 15 15 4.5 50 100 600 150
-55 to+150
Unit V V V mA mA
mW OC OC
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Characteristics at Tamb=25 OC
Parameter DC Current Gain*
at -VCE=1V, -IC=10mA at -VCE=1V, -IC=1mA Collector Cutoff Current at -VCB=8V Emitter Cutoff Current at -VEB=3V Collector Saturation Voltage* at -IC=10mA, -IB=1mA Base Saturation Voltage* at -IC=10mA, -IB=1mA Turn-on Time See test circuit Storage Time See test circuit Turn-off Time See test circuit Gain Bandwidth Product at -VCE=10V, IE=10mA, f=100MHz Output Capacitance at -VCB=5V, f=1MHz *Pulsed PW≦350μs, Duty Cycle≦2%
Symbol hFE hFE -ICBO -IEBO
-VCE(sat) -VBE(sat)
ton tstg toff fT COB
Min. 50 30 800 -
Typ. 80 70 0.09 0.8 9 16 19 1800 2
Max. 150
0.1 0.1 0.2 0.95 20 40 40
3
Unit μA μA V V ns ns ns
MHz pF
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