BC847C

BC847B ® BC847C Type BC847B BC847C SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Marking 1F 1G s SILICON EPITAXIAL PLANAR NPN TRANSISTORS s MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS s TAPE AND REEL PACKING s BC847B - THE PNP COMPLEMENTARY TYPE IS BC857B APPLICATIONS s WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN AND LOW SATURATION VOLTAGE SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current ICM Collector Peak Current Ptot Total Dissipation at TC = 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature June 2002 Value 50 45 6 100 200 250 -65 to 150 150 Unit V V V mA mA mW oC oC 1/4 BC847B / BC847C THERMAL DATA Rthj-amb Thermal Resistance Junction-Ambient Device mounted on a PCB area of 1 cm2. Max 500 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) VCB = 30 V VCB = 30 V TC = 150 oC IEBO V(BR)CBO V(BR)CEO∗ V(BR)EBO VCE(sat)∗ Emitter Cut-off Current (IC = 0) Collector-Base Breakdown Voltage (IE = 0) Collector-Emitter Breakdown Voltage (IB = 0) Emitter-Base Breakdown Voltage (IC = 0) Collector-Emitter Saturation Voltage VEB = 5 V IC = 10 µA IC = 2 mA IE = 10 µA IC = 10 mA IC = 100 mA IB = 0.5 mA IB = 5 mA VBE(sat)∗ Bas...