2SAR513P

Midium Power Transistors (-50V / -1A) 2SAR513P  Structure PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA) 2) High speed switching  Applications Driver  Packaging specifications Package Type Code Taping T100 Basic ordering unit (pieces) 1000 2SAR513P   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature VCBO VCEO VEBO IC ICP *1 PD *2 PD *3 Tj Tstg -50 -50 -6 -1 -2 0.5 2 150 -55 to 150 *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm³) Unit V V V A A W W C C  Dimensions (Unit : mm) (1) (2) (3) Abbreviated symbol : MC  Inner circuit (Unit : mm) (1) Base (2) Collector (3) Emitter www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.12 - Rev.A 2SAR513P Electrical characteristic (Ta = 25C) Parameter Symbol Collector-emitter breakdown voltage BVCEO Collector-base breakdown voltage BVCBO Emitter-base breakdown voltage BVEBO Collector cut-off current ICBO Emitter cut-off current Collector-emitter staturation voltage IEBO VCE(sa*t)1 DC current gain hFE Transition frequency fT *1 Min. -50 -50 -6 180 - Collector output capacitance Turn-on time Storage time Fall time *1 Pulsed *2 See swit...