General purpose transistor(-50V,-0.1A)
2SAR523M/2SAR523EB/2SAR523UB
Structure PNP silicon epitaxial planar transistor
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General purpose
transistor(-50V,-0.1A)
2SAR523M/2SAR523EB/2SAR523UB
Structure
PNP silicon epitaxial planar
transistor
Dimensions (Unit : mm)
VMT3
Features Complemets the 2SCR523M/2SCR523EB/2SCR523UB.
Applications Switch, LED driver
EMT3F
Abbreviated symbol : PB
Packaging specifications
Package
Type
Packaging Type Code
Basic ordering unit (pieces)
2SAR523M
2SAR523EB
2SAR523UB
VMT3 Taping
T2L
8000
EMT3F Taping
TL
3000
UMT3F Taping
TL
3000
UMT3F
(3) (1) (2) Abbreviated symbol : PB
2.0 0.32
(3)
0.9
2.1 1.25 0.425
0.425
(1)
0.65 0.65 1.3
(2) 0.13
Abbreviated symbol : PB
0.53 0.53
Absolute maximum ratings (Ta=25C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
−50
Collector-emitter voltage VCEO
−50
Emitter-base voltage
VEBO
−5
Collector current
IC ICP ∗1
−100 −200
Power 2SAR523M,2SAR523EB dissipation 2SAR523UB
PD ∗2
150 200
Junction temperature
Tj 150
Storage temperature
Tstg −55 to +150
∗1 Pw=1mS Single pulse ∗2 Each terminal mounted on a recommended land
Unit V V V mA mA
mW mW °C °C
inner circuit
(3)
(1) (1) Base (2) Emitter
(2) (3) Collector
Electrical characteristics (Ta=25C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Output capacitance
Symbol BVCEO BVCBO BVEBO
ICBO IEBO VCE(sat) hFE fT Cob
Min. Typ. Max. Unit
Conditions
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